********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
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*Jul 14, 2014
*ECN S14-1385, Rev. B
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product data sheet.  Designers should refer to the
*appropriate data sheet of the same number for guaranteed specification
*limits.
.SUBCKT Si2305CDS D G S 
M1 3 GX S S PMOS W= 1090000u L= 0.25u 
M2 S GX S D NMOS W= 1090000u L= 4.592e-07 
R1 D 3 3.001e-03 1.722e-02 -7.530e-06 
CGS GX S 1.193e-10 
CGD GX D 1.804e-11 
RG G GY 5.1 
RTCV 100 S 1e6 -2.053e-04 -6.879e-07 
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 
**************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 1.7e-8 
+ RS = 1.875e-02 KP = 9.283e-06 NSUB = 8.418e+13 
+ KAPPA = 9.653e-05 ETA = 2.437e-04 NFS = 1.808e+12 
+ LD = 0 IS = 0 TPG = -1) 
*************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 1.7e-8 
+NSUB = 1.549e+17 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 8.673e-09 TREF = 25 BV = 10 
+RS = 4.338e-02 N = 1.325e+00 IS = 9.881e-08 
+EG = 5.000e-01 XTI = 1.000e+01 TRS = 1.000e-05 
+CJO = 1.223e-10 VJ = 3.526e-01 M = 3.205e-01 ) 
.ENDS 
